| Enhanced electron mobility at gadolinium oxide(100)/silicon(100) interface : origin and applications |
2012 |
1297 |
A growth of a gadolinium oxide (Gd2O3) layer with (100) orientation on a Si(100) substrate was obtained for the first time using molecular beam epitaxy deposition (MBE) with the growth temperature in the range of 150-200°C and the oxygen partial pres... |